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| TLP421 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP421 Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits Unit in mm The TOSHIBA TLP421 consists of a silicone photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). * * * * * Collector-emitter voltage: 80V (min.) Current transfer ratio: 50% (min.) Rank GB: 100% (min.) Isolation voltage: 5000Vrms (min.) UL recognized: UL1577 BSI approved: BS EN60065: 1994 Approved no.8411 BS EN60950: 1992 Approved no.8412 1 2 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 4 3 TOSHIBA Weight: 0.26 g 11-5B2 Pin Configurations (top view) * SEMKO approved: EN60065, EN60950, EN60335 Approved no.9910249/01 1 2002-09-25 TLP421 * Option(D4)type TUV approved: DIN VDE0884 Approved no.R9950202 Maximum operating insulation voltage: 890VPK Maximu permissible overvoltage: 8000VPK (Note): When a VDE0884 approved type is needed, please designate the "Option(D4)" Making the VDE applocation: DIN VDE0884 * Construction mechanical rating 7.62mm Pich Typical Type Creepage distance Clearance Insulation thickness 7.0mm(min) 7.0mm(min) 0.4mm(min) 10.16mm Pich TLPxxxF Type 8.0mm(min) 8.0mm(min) 0.4mm(min) Current Transfer Ratio Type Classification (*1) (None) Rank Y TLP421 Rank GR Rank BL Rank GB Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25C Min Max 50 50 100 200 100 600 150 300 600 600 Marking Of Classification Blank, Y, Y+, G, G+, B, B+, GB Y, Y+ G, G+ B, B+ G, G+, B, B+, GB (*1): Ex. rank GB: TLP421 (GB) (Note): Application type name for certification test, please use standard product type name, i. e. TLP421 (GB): TLP421 2 2002-09-25 TLP421 Maximum Ratings (Ta = 25C) Characteristic Forward current Forward current derating(Ta 39C) Pulse forward current LED Power dissipation Power dissipation derating Reverse voltage Junction temperature Collector-emitter voltage Emitter-collector voltage Detector Collector current Power dissipation(single circuit) Power dissipation derating (Ta 25C)(single circuit) Junction temperature Operating temperature range Storage temperature range Lead soldering temperature (10s) Total package power dissipation Total package power dissipation derating (Ta 25C) Isolation voltage (Note 3) (Note 2) Stmbol IF IF / C IFP PD PD / C VR Tj VCEO VECO IC PC PC / C Tj Topr Tstg Tsol PT PT / C BVS Rating 60 -0.7 1 100 -1.0 5 125 80 7 50 150 -1.5 125 -55~100 -55~125 260 250 -2.5 5000 Unit mA mA / C A mW mW / C V C V V mA mW mW / C C C C C mW mW / C Vrms (Note 2): 100s pulse, 100Hz frequency (Note 3): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together. Recommended Operating Conditions Characteristic Supply voltage Forward current Collector current Operating temperature Symbol VCC IF IC Topr Min -25 Typ. 5 16 1 Max 24 25 10 85 Unit V mA mA C 3 2002-09-25 TLP421 Individual Electrical Characteristics (Ta = 25C) Characteristic Forward voltage LED Reverse current Capacitance Collector-emitter breakdown voltage Emitter-collector breakdown voltage Symbol VF IR CT V(BR) CEO V(BR) ECO Test Condition IF = 10 mA VR = 5 V V = 0, f = 1 MHz IC = 0.5 mA IE = 0.1 mA VCE = 24 V (ambient light below 1000 x) VCE = 24 V (ambient light Ta = 85C below 1000 x) V = 0, f = 1 MHz Min 1.0 80 7 Typ. 1.2 30 0.01 (0.1) 0.6 (1) 10 Max 1.3 10 0.1 (10) 50 (50) Unit V A pF V V A A pF Detector Collector dark current ID(ICEO) Capacitance (collector to emitter) CCE Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Symbol IC / IF Test Condition IF = 5 mA, VCE = 5 V MIn 50 Rank GB 100 Rank GB 30 Rank GB Typ. 60 0.2 Max 600 600 0.4 0.4 V Unit % Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V IC = 2.4 mA, IF = 8 mA % Collector-emitter saturation voltage VCE (sat) IC = 0.2 mA, IF = 1 mA Isolation Characteristics (Ta = 25C) Characteristic Capacitance (input to output) Isolation resistance Symbol CS RS Test Condition VS = 0, f = 1 MHz VS = 500 V AC, 1 minute Isolation voltage BVS AC, 1 second, in oil DC, 1 minute, in oil Min 1x1012 5000 Typ. 0.8 1014 10000 10000 Max Unit pF Vrms Vdc 4 2002-09-25 TLP421 Switching Characteristics (Ta = 25C) Characteristics Rise time Fall time Turn-on time Turn-off time Turn-on time Storage time Turn-off time Symbol tr tf ton toff tON ts tOFF RL = 1.9 k VCC = 5 V, IF = 16 mA (Fig.1) VCC = 10 V, IC = 2 mA RL = 100 Test Condition Min Typ. 2 3 3 3 2 25 50 Max s s Unit IF IF RL VCC VCE VCE ts VCC 4.5V 0.5V tON tOFF Fig.1 Switching time test circuit 5 2002-09-25 TLP421 IF - Ta 100 200 PC - Ta Allowable forward current IF (mA) 60 Allowable collector power dissipation PC (mW) 0 20 40 60 80 100 120 80 160 120 40 80 20 40 0 -20 0 -20 0 20 40 60 80 100 120 Ambient temperature Ta () Ambient temperature Ta () IFP - DR 3000 100 IF - VF (mA) 1000 IFP Forward current IF (mA) 10 Pulse forward current 100 1 10 0.001 0.01 0.1 1 0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Duty cycle ratio DR Forward voltage VF (V) -3.0 VF / Ta - IF 1000 IFP - VFP Pulse width 10s Repetitive frequency=100Hz Ta = 25 Forword voltage temperature coefficent VF / Ta (mV / ) -2.6 IFP Pulse forward current (mA) 100 10 -2.2 -1.8 -1.4 -1.0 -0.6 0.1 1 10 100 1 0 0.4 0.8 1.2 1.6 2.0 2.4 Forward current IF (mA) Pulse forward voltage VFP (V) 6 2002-09-25 TLP421 ID - Ta 10 80 IC - VCE (A) (mA) 1 VCE=24 V 0.1 10 001 60 30 20 15 50 40 10 Collector dark current IC 5 Collector current IC 20 IF=5mA 0.001 0.0001 0 20 40 60 80 0 100 0 2 4 6 8 10 Ambient temperature Ta () Collector-emitter voltage VCE (V) 30 50 40 IC - VCE 30 20 100 10 IC - IF (mA) IC 20 10 5 Collector current (mA) Sample A 10 IF= 2 mA Collector current IC Sample 1 B 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Collector-emitter voltage VCE (V) 0.1 1000 IC /IF - IF Ta = 25C VCE = 5V VCE = 0.4V Sample A 0.01 0.1 1 10 100 IC / IF (%) Current transfer ratio 100 Sample B Forward current IF (mA) 10 Ta = 25C VCE = 5V VCE = 0.4V 3 0.1 1 10 100 Forward current IF (mA) 7 2002-09-25 TLP421 100 IC - Ta 25 10 0.20 VCE(sat) - Ta IF = 5 mA IC = 1 mA IC (mA) 10 5 Collector-emitter saturation voltage VCE(sat) (V) 60 0.16 0.12 Collector current 0.08 1 1 VCE = 5V 0.1 -20 0 20 IF = 0.5 mA 0.04 40 80 100 0 -20 0 20 40 60 80 100 Ambient temperature Ta () Ambient temperature Ta () 1000 Switching Time - RL Ta = 25C IF = 16mA VCC = 5V tOFF 100 (s) Switching time tS 10 tON 1 1 10 100 Load resistance RL (k) 8 2002-09-25 TLP421 RESTRICTIONS ON PRODUCT USE 000707EBC * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 9 2002-09-25 |
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